IndiumV3, Chine, Analysis, bibRecord, 000C95

Temperature dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials

Identifieur interne : 000C95 ( Chine/Analysis ); précédent : 000C94; suivant : 000C96

Temperature dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials

Auteurs : RBID : Pascal:09-0085160

Descripteurs français

Pascal (Inist)
- Effet température, Propriété thermique, Chaleur massique, Diffusivité thermique, Conductivité thermique, Diffusion thermique, Etat cristallin, Argent Indium Telluroantimoniure Mixte, Matériau PCM, Etat amorphe, Semiconducteur, Matériau composite.
Wicri :
- concept : Matériau composite.

English descriptors

KwdEn :
- Amorphous state, Composite materials, Crystalline state, PCM material, Semiconductor materials, Silver Indium Antimonides tellurides Mixed, Specific heat, Temperature effects, Thermal conductivity, Thermal diffusion, Thermal diffusivity, Thermal properties.

Abstract

The dependence of thermal properties of Ag₈In₁₄Sb₅₅Te₂₃ phase-change memory materials in crystalline and amorphous states on temperature was measured and analyzed. The results show that in the crystalline state, the thermal properties monotonically decrease with the temperature and present obvious crystalline semiconductor characteristics. The heat capacity, thermal diffusivity, and thermal conductivity decrease from 0.35 J/gK, 1.85 mm²/s, and 4.0 W/mK at 300 K to 0.025 J/gK, 1.475 mm²/s, and 0.25 W/mK at 600 K, respectively. In the amorphous state, while the dependence of thermal properties on temperature does not present significant changes, the materials retain the glass-like thermal characteristics. Within the temperature range from 320 K to 440 K, the heat capacity fluctuates between 0.27 J/g K and 0.075 J/g K, the thermal diffusivity basically maintains at 0.525 mm²/s, and the thermal conductivity decreases from 1.02 W/m K at 320 K to 0.2 W/mK at 440 K. Whether in the crystalline or amorphous state, Ag₈In₁₄Sb₅₅Te₂₃ are more thermally active than Ge₂Sb₂Te₅, that is, the Ag₈In₁₄Sb₅₅Te₂₃ composites bear stronger thermal conduction and diffusion than the Ge₂Sb₂Te₅ phase-change memory materials.

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Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Temperature dependence of thermal properties of Ag<sub>8</sub>
In<sub>14</sub>
Sb<sub>55</sub>
Te<sub>23</sub>
 phase-change memory materials</title>
<author><name>XINBING JIAO</name>
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<s2>Shanghai 201800</s2>
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<sZ>3 aut.</sZ>
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<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences</wicri:noRegion>
</affiliation>
</author>
<author><name>JINGSONG WEI</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Apartado Postal 365</s1>
<s2>CP 22800 Ensenada, Baja California</s2>
<s3>MEX</s3>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Mexique</country>
<wicri:noRegion>CP 22800 Ensenada, Baja California</wicri:noRegion>
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</author>
<author><name>FUXI GAN</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences</s1>
<s2>Shanghai 201800</s2>
<s3>CHN</s3>
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<sZ>3 aut.</sZ>
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<wicri:noRegion>Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences</wicri:noRegion>
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<author><name>MUFEI XIAO</name>
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<front><div type="abstract" xml:lang="en">The dependence of thermal properties of Ag<sub>8</sub>
In<sub>14</sub>
Sb<sub>55</sub>
Te<sub>23</sub>
 phase-change memory materials in crystalline and amorphous states on temperature was measured and analyzed. The results show that in the crystalline state, the thermal properties monotonically decrease with the temperature and present obvious crystalline semiconductor characteristics. The heat capacity, thermal diffusivity, and thermal conductivity decrease from 0.35 J/gK, 1.85 mm<sup>2</sup>
/s, and 4.0 W/mK at 300 K to 0.025 J/gK, 1.475 mm<sup>2</sup>
/s, and 0.25 W/mK at 600 K, respectively. In the amorphous state, while the dependence of thermal properties on temperature does not present significant changes, the materials retain the glass-like thermal characteristics. Within the temperature range from 320 K to 440 K, the heat capacity fluctuates between 0.27 J/g K and 0.075 J/g K, the thermal diffusivity basically maintains at 0.525 mm<sup>2</sup>
/s, and the thermal conductivity decreases from 1.02 W/m K at 320 K to 0.2 W/mK at 440 K. Whether in the crystalline or amorphous state, Ag<sub>8</sub>
In<sub>14</sub>
Sb<sub>55</sub>
Te<sub>23</sub>
 are more thermally active than Ge<sub>2</sub>
Sb<sub>2</sub>
Te<sub>5</sub>
, that is, the Ag<sub>8</sub>
In<sub>14</sub>
Sb<sub>55</sub>
Te<sub>23</sub>
 composites bear stronger thermal conduction and diffusion than the Ge<sub>2</sub>
Sb<sub>2</sub>
Te<sub>5</sub>
 phase-change memory materials.</div>
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In<sub>14</sub>
Sb<sub>55</sub>
Te<sub>23</sub>
 phase-change memory materials</s1>
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In<sub>14</sub>
Sb<sub>55</sub>
Te<sub>23</sub>
 phase-change memory materials in crystalline and amorphous states on temperature was measured and analyzed. The results show that in the crystalline state, the thermal properties monotonically decrease with the temperature and present obvious crystalline semiconductor characteristics. The heat capacity, thermal diffusivity, and thermal conductivity decrease from 0.35 J/gK, 1.85 mm<sup>2</sup>
/s, and 4.0 W/mK at 300 K to 0.025 J/gK, 1.475 mm<sup>2</sup>
/s, and 0.25 W/mK at 600 K, respectively. In the amorphous state, while the dependence of thermal properties on temperature does not present significant changes, the materials retain the glass-like thermal characteristics. Within the temperature range from 320 K to 440 K, the heat capacity fluctuates between 0.27 J/g K and 0.075 J/g K, the thermal diffusivity basically maintains at 0.525 mm<sup>2</sup>
/s, and the thermal conductivity decreases from 1.02 W/m K at 320 K to 0.2 W/mK at 440 K. Whether in the crystalline or amorphous state, Ag<sub>8</sub>
In<sub>14</sub>
Sb<sub>55</sub>
Te<sub>23</sub>
 are more thermally active than Ge<sub>2</sub>
Sb<sub>2</sub>
Te<sub>5</sub>
, that is, the Ag<sub>8</sub>
In<sub>14</sub>
Sb<sub>55</sub>
Te<sub>23</sub>
 composites bear stronger thermal conduction and diffusion than the Ge<sub>2</sub>
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Temperature dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials

Temperature dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri